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SILICON CARBIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.5% (METALS BASIS)

SILICON CARBIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.5% (METALS BASIS) Struktur
CAS-Nr.
Englisch Name:
SILICON CARBIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.5% (METALS BASIS)
Synonyma:
SILICON CARBIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.5% (METALS BASIS)
CBNumber:
CB1660175
Summenformel:
Molgewicht:
0
MOL-Datei:
Mol file

SILICON CARBIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.5% (METALS BASIS) Eigenschaften

Sicherheit

SILICON CARBIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.5% (METALS BASIS) Chemische Eigenschaften,Einsatz,Produktion Methoden

SILICON CARBIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.5% (METALS BASIS) Upstream-Materialien And Downstream Produkte

Upstream-Materialien

Downstream Produkte

SILICON CARBIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 3.18MM (0.125IN) THICK, 99.5% (METALS BASIS) Anbieter Lieferant Produzent Hersteller Vertrieb H?ndler.

Global( 0)Lieferanten
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