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- 1540°C
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- 1540°C
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- 4,39 g/cm3
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- XR2420000
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- insoluble in H2O, acid solutions, alkaline solutions; soluble in HF
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- 123 (ρ/μΩ.cm)
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- Crystal Structure
- Orthorhombic
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| ????(UN No.) | UN3178 | ||
|---|---|---|---|
| TSCA | TSCA listed | ||
| ?? ?? | 4.1 | ||
| ???? | III | ||
| ???? ?? | KE-33901 |
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orthorhombic black powder(s), a=0.8236 nm, b=0.4773nm, c=0.8523 nm; hardness 4.5 Mohs; resistivity 123μοhm· cm can be prepared by reaction of the elements; used in special alloy applications, as a flame-resistant coating material, also as 99.5 or 99.9% pure material, as a sputtering target in the fabrication of integrated circuits [HAW93] [STR93] [CER91]??
Titanium silicide is used in the semiconductor industry. It is also used in the fabrication of transistors.Synthesis
(1) PREPARATION FROM THE ELEMENTSTi + 2 Si = TiSi2
The silicides are prepared by fusing or sintering intimate stoichiometric mixtures of the elements (in powder form). The reaction is carried out in sintered clay or ceramic crucibles, placed in a Tammann furnace under a blanket of Ar. In all three cases the reaction takes place at a relatively low temperature and is highly exothermic; therefore, one should work with gram quantities only.
(2) ALUMINOTHERMIC METHOD
Ignition of a mixture of, for example, 200 g. of Al powder, 250 g. of S, 180 g. of SiOa and 15 g. of TiO2 (or 40 g. of K2TiF6 ), covered with a thin layer of Mg, yields an ingot containing, in addition to Si and Al, small, iron-gray tetragonal pyramids of TiSi2 .
(3) ELECTROLYTIC PREPARATION
The pure, crystalline silicides ar e obtained by melt electrolysis of a mixture of, for example, 10K2SiF6 + TiO2 at about 900°C, using an iron cathode; alternately, electrolysis of TiO2 dissolved in a melt of silicate may be used.
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